期刊
APPLIED PHYSICS EXPRESS
卷 13, 期 8, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.35848/1882-0786/aba64b
关键词
Semiconductor; GaN; Fabrication process; Power device; Mg-implantation; Post-implantation-annealing; diffusion
资金
- MEXT Research and development of next-generation semiconductor to realize energy-saving society Program [JPJ005357]
- Polish National Science Centre [2018/29/B/ST5/00338]
Diffusion in a magnesium (Mg)-implanted homoepitaxial GaN layer during ultra-high-pressure annealing (UHPA, in ambient nitrogen, under 1 GPa) was investigated. Annealing at 1573 K resulted in Mg-segregation at the edge of the implanted region, which was suppressed using a higher temperature of 1673 K. Hydrogen (H) atoms were incorporated during the UHPA, resulting in the Mg and H developing the same diffusion profile in the deeper region. The diffusion coefficient of the Mg-implanted sample was 3.3 x 10(-12) cm(2) s(-1)at 1673 K from the annealing duration dependence, 30 times larger than that of the epitaxial Mg-doped sample, originating from ion implantation-induced defects.
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