期刊
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
卷 126, 期 9, 页码 -出版社
SPRINGER HEIDELBERG
DOI: 10.1007/s00339-020-03869-9
关键词
Band-to-band tunneling (BTBT); Tunnel field-effect transistor (TFET); Heterojunction; Selective buried oxide (SELBOX); Interface trap charge (ITC)
This paper reports the TCAD based investigation of the DC/RF and linearity characteristics of a newly proposed dual-material (DM) laterally-stacked (LS) SiO2/HfO2 heterojunction-TFET-on-SELBOX substrate (LS-STFET). Device-level performance comparison is made between the proposed TFET with a dual-material (DM) vertically-stacked (VS) SiO2/HfO2 heterojunction-TFET-on-SELBOX substrate (VS-STFET). Low bandgap material Ge is used in the source region to form a Ge (source)/Si (channel) heterojunction for enhancing the ON-state current of the presented TFETs. The effects of both donor (+ve) and acceptor (-ve) type interface trap charges at the channel/SiO2 region on the DC, analogue/RF and linearity figure of merits have been analyzed for both the devices under study. The LS-STFET is shown to possess higher ON-state current and smaller subthreshold swing (SS) over the VS-STFET. In addition, the LS-STFET is shown to have better DC, analog/RF and linearity performance over VS-STFET in the presence of the donor and acceptor interface trap charges.
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