期刊
APPLIED OPTICS
卷 59, 期 25, 页码 7646-7651出版社
OPTICAL SOC AMER
DOI: 10.1364/AO.398873
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资金
- National Key Research and Development Program of China [2019YFB2203502]
- Strategic Pioneer Research Projects of Defense Science and Technology [XDB43020500]
- National Outstanding Youth Foundation of China [61904185]
We present the design of Ge1-xSnx-on-Si waveguide photodetectors for the applications in the C- to U-bands. The GeSn photodetectors have been studied in respect to responsivity, dark current, and bandwidth, with light buttor evanescent-coupled from an Si waveguide. With the introduction of 4.5% Sn into Ge, the GeSn waveguide PD with evanescent-coupling exhibits high responsivity of 1.25 A/W and 3 dB bandwidth of 123.1 GHz at 1.675 mu m. Further increasing the Sn composition cannot improve the absorption in the U-band significantly but does lead to poorer thermal stability and higher dark current. This work suggests a promising avenue for future high-speed high-responsivity photodetection in the C- to U-bands. (C) 2020 Optical Society of America
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