4.8 Article

Highly Efficient Deep-Red Non-Doped Diodes Based on a T-Shape Thermally Activated Delayed Fluorescence Emitter

期刊

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
卷 59, 期 43, 页码 19042-19047

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/anie.202008885

关键词

carrier transport; deep-red emission; OLEDs; quenching suppression; TADF

资金

  1. Changjiang Scholar Program of Chinese Ministry of Education [Q2016208]
  2. NSFC [21672056, 21602048, 51873056]
  3. Young Innovative Team Supporting Projects of Heilongjiang Province

向作者/读者索取更多资源

Device simplification is of practical significance for organic light emitting diodes (OLEDs), and remains the great challenge for deep-red emitters. Herein, a deep-red thermally activated delayed fluorescence molecule (pTPA-DPPZ) is reported which features a T shaped structure containing two triphenylamine (TPA) donors, one either side of a planar dipyridophenazine (DPPZ) acceptor. The rational spatial arrangement of the functional groups leads to limited but sufficient molecular packing for effective carrier transport. The neatpTPA-DPPZfilm achieves an around 90-fold improved radiation rate constant of 10(7) s(-1)and the nearly unitary reverse intersystem crossing (RISC) efficiency, as well as accelerated emission decays for quenching suppression. The high radiation and RISC result in a photoluminescence quantum yield of 87 %. The bilayer OLED based on thepTPA-DPPZemissive layer achieved the record external quantum efficiencies of 12.3 % for maximum and 10.4 % at 1000 nits, accompanied by the deep-red electroluminescence with the excellent color purity.

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