期刊
ADVANCED MATERIALS
卷 32, 期 37, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202002799
关键词
magnetization switching; semimetal MoTe2; spin-orbit torque; spintronics
类别
资金
- SpOT-LITE programme (A*STAR) through RIE2020 funds from Singapore [18A6b0057]
- Singapore Ministry of Education [R-263-000-D61-114]
- Samsung Electronics' University R&D program (Exotic SOT materials/SOT characterization)
- NNSFC [11904088]
The ability to switch magnetic elements by spin-orbit-induced torques has recently attracted much attention for a path toward high-performance, nonvolatile memories with low power consumption. Realizing efficient spin-orbit-based switching requires the harnessing of both new materials and novel physics to obtain high charge-to-spin conversion efficiencies, thus making the choice of spin source crucial. Here, the observation of spin-orbit torque switching in bilayers consisting of a semimetallic film of 1T '-MoTe(2)adjacent to permalloy is reported. Deterministic switching is achieved without external magnetic fields at room temperature, and the switching occurs with currents one order of magnitude smaller than those typical in devices using the best-performing heavy metals. The thickness-dependence can be understood if the interfacial spin-orbit contribution is considered in addition to the bulk spin Hall effect. Further threefold reduction in the switching current is demonstrated with resort to dumbbell-shaped magnetic elements. These findings foretell exciting prospects of using MoTe(2)for low-power semimetal-material-based spin devices.
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