期刊
ADVANCED MATERIALS
卷 32, 期 37, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202002628
关键词
charge transfer complex; graphene; photodetection; photogating; shortwave infrared region
类别
资金
- NSFC [21673058, 21822502]
- Key Research Program of Frontier Sciences of CAS [QYZDB-SSW-SYS031]
- Strategic Priority Research Program of CAS [XDB30000000]
Room-temperature, high-sensitivity, and broadband photodetection up to the shortwave infrared (SWIR) region is extremely significant for a wide variety of optoelectronic applications, including contamination identification, thermal imaging, night vision, agricultural inspection, and atmospheric remote sensing. Small-bandgap semiconductor-based SWIR photodetectors generally require deep cooling to suppress thermally generated charge carriers to achieve increased sensitivity. Meanwhile, the photogating effect can provide an alternative way to achieve superior photosensitivity without the need for cooling. The optical photogating effect originates from charge trapping of photoinduced carriers at defects or interfaces, resulting in an extremely high photogain (10(6)or higher). Here, a highly sensitive SWIR hybrid photodetector, fabricated by integrating an organic charge transfer complex on a graphene transistor, is reported. The organic charge transfer complex (tetrathiafulvalene-chloranil) has an exceptional low-energy intermolecular electronic transition down to 0.5 eV, with the aim of achieving efficient SWIR absorption for wavelengths greater than 2 mu m. The photogating effect at the organic complex and graphene interface enables an extremely high photogain and a high detectivity of approximate to 10(13)Jones, along with a response time of 8 ms, at room temperature for a wavelength of 2 mu m.
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