期刊
ACS NANO
卷 14, 期 7, 页码 9098-9106出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.0c04329
关键词
two-dimensional semiconductor; van der Waals contacts; fully depleted channel; self-limited depletion region; nanoseconds
类别
资金
- National Basic Research Program of China [2019YFB1310200]
- Foundation for Innovative Research Groups of the National Natural Science Foundation of China [51521003]
- National Postdoctoral Science Foundation of China [2017M621254, 2018T110280]
- Heilongjiang Provincial Postdoctoral Science Foundation [LBH-TZ1708]
- Self-Planned Task of State Key Laboratory of Robotics and System (HIT) [SKLRS201607B]
- Engineering Physics and Science Research Council of UK (EPSRC) [EP/P018998/1]
- Newton Mobility Grant through Royal Society [IE161019]
- Natural Science Foundation of China
- EPSRC [EP/P018998/1] Funding Source: UKRI
Self-powered photodetectors with great potential for implanted medical diagnosis and smart communications have been severely hindered by the difficulty of simultaneously achieving high sensitivity and fast response speed. Here, we report an ultrafast and highly sensitive self-powered photo-detector based on two-dimensional (2D) InSe, which is achieved by applying a device architecture design and generating ideal Schottky or ohmic contacts on 2D layered semiconductors, which are difficult to realize in the conventional semiconductors owing to their surface Fermi-level pinning. The as-fabricated InSe photodiode features a maximal lateral self-limited depletion region and a vertical fully depleted channel. It exhibits a high detectivity of 1.26 x 10(13) Jones and an ultrafast response speed of , similar to 200 ns, which breaks the response speed limit of reported self-powered photodetectors based on 2D semiconductors. The high sensitivity is achieved by an ultralow dark current noise generated from the robust van der Waals (vdW) Schottky junction and a high photoresponsivity due to the formation of a maximal lateral self-limited depletion region. The ultrafast response time is dominated by the fast carrier drift driven by a strong built-in electric field in the vertical fully depleted channel. This device architecture can help us to design high-performance photodetectors utilizing vdW layered semiconductors.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据