4.8 Review

Two-Dimensional Materials for Energy-Efficient Spin-Orbit Torque Devices

期刊

ACS NANO
卷 14, 期 8, 页码 9389-9407

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.0c04403

关键词

two-dimensional materials; spin-orbit coupling; spin-orbit torque; crystal symmetry; current-induced magnetization switching; transition-metal dichalcogenide; topological insulator; magnetoresistive random-access memory

资金

  1. HKUST ECE start-up fund

向作者/读者索取更多资源

Spin-orbit torques (SOTs), which rely on spin current generation from charge current in a nonmagnetic material, promise an energy-efficient scheme for manipulating magnetization in magnetic devices. A critical topic for spintronic devices using SOTs is to enhance the charge to spin conversion efficiency. Besides, the current-induced spin polarization is usually limited to in-plane, whereas out-of-plane spin polarization could be favored for efficient perpendicular magnetization switching. Recent advances in utilizing two important classes of two-dimensional materials-topological insulators and transition-metal dichalcogenides-as spin sources to generate SOT shed light on addressing these challenges. Topological insulators such as bismuth selenide have shown a giant SOT efficiency, which is larger than those from three-dimensional heavy metals by at least 1 order of magnitude. Transition-metal dichalcogenides such as tungsten telluride have shown a current-induced out-of-plane spin polarization, which is allowed by the reduced symmetry. In this review, we use symmetry arguments to predict and analyze SOTs in two-dimensional material-based heterostructures. We summarize the recent progress of SOT studies based on topological insulators and transition-metal dichalcogenides and show how these results are in line with the symmetry arguments. At last, we identify unsolved issues in the current studies and suggest three potential research directions in this field.

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