期刊
ACS APPLIED MATERIALS & INTERFACES
卷 12, 期 32, 页码 36660-36669出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c06534
关键词
flexible PDMS; non-centrosymmetric GaN layer; graphene layer; strain-induced; piezotronic effect
资金
- National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Fusion Research [2018R1D1A1B07040603]
- BK21 Plus - Ministry of Education [21A20131600011]
- NRF - Korea government [NRF-2019R1F1A1060655]
- National Research Foundation of Korea [2018R1D1A1B07040603] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Using simple graphene transfer and the laser lift-off process for a non-centrosymmetric GaN layer on a flexible polydimethylsiloxane (PDMS) substrate, the piezotronic effect by strain-induced current-voltage measurements at the two end points is studied. By inducing compressive strain on the flexible graphene/GaN/PDMS sensor, the Schottky barrier between the graphene and GaN/PDMS heterojunction can be electro-mechanically modulated by the piezotronic effect. It is observed that the flexible graphene/GaN/PDMS sensor is sensitive to various applied compressive and tensile strains in the positive/negative bias scans. The sensor is extremely sensitive to a compressive strain of -0.1% with a gauge factor of 13.48, which is 3.7 times higher than that of a standard metal strain gauge. Furthermore, the sharp response of the flexible graphene/GaN/PDMS sensor under the -0.1% compressive strain is also investigated. The results of this study herald the development of commercially viable large-scale flexible/wearable strain sensors based on the strain-controlled piezotronic effect in future investigations.
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