期刊
ACS APPLIED MATERIALS & INTERFACES
卷 12, 期 36, 页码 40532-40540出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c11933
关键词
molybdenum disulfide; field-effect transistors; Schottky barrier; scanning electron microscopy; Raman spectroscopy; photoluminescence; electron beam irradiation; electron interactions in solids
资金
- MIUR-Italian Ministry of Education, University and Research [ARS01_01061, ARS01_01088]
- DFG-German Research Foundation [406129719]
- German Research Foundation (DFG) [RI_00313]
Metal contacts play a fundamental role in nanoscale devices. In this work, Schottky metal contacts in monolayer molybdenum disulfide (MoS2) field-effect transistors are investigated under electron beam irradiation. It is shown that the exposure of Ti/Au source/drain electrodes to an electron beam reduces the contact resistance and improves the transistor performance. The electron beam conditioning of contacts is permanent, while the irradiation of the channel can produce transient effects. It is demonstrated that irradiation lowers the Schottky barrier at the contacts because of thermally induced atom diffusion and interfacial reactions. The simulation of electron paths in the device reveals that most of the beam energy is absorbed in the metal contacts. The study demonstrates that electron beam irradiation can be effectively used for contact improvement through local annealing.
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