4.8 Article

Light-Emitting Transistors with High Color Purity Using Perovskite Quantum Dot Emitters

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 12, 期 31, 页码 35175-35180

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c05537

关键词

organic-inorganic halide perovskite; quantum dot; super yellow; light-emitting transistors; zinc-oxynitride

资金

  1. Basic Science Research Program, through the National Research Foundation of Korea
  2. Ministry of Science and ICT [2019R1A2C1087653]
  3. Ministry of Trade, Industry and Energy (MOTIE) [10051954]
  4. Korea Display Research Corporation (KDRC) support program
  5. Korea Evaluation Institute of Industrial Technology (KEIT) [10051954] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

The class of organic-inorganic lead halides with perovskite crystal structures has recently emerged as promising materials for a variety of practical optoelectronic applications. In particular, hybrid halide perovskite quantum dots possess excellent intrinsic optoelectronic properties such as high color purity (full width at half-maximum of 24.59 nm) and photoluminescence quantum yields (92.7%). In this work, we demonstrate the use of perovskite quantum dot materials as an emissive layer of hybrid light-emitting transistors. To investigate the working mechanism of perovskite quantum dots in light-emitting transistors, we investigated the electrical and optical characteristics under both p-channel and n-channel operation. Using these materials, we have achieved perovskite quantum dot light-emitting transistors with high electron mobilities of up to 12.06 cm(2).V-1 s(-1), high brightness of up to 1.41 x 10(4) cd m(-2), and enhanced external quantum efficiencies of up to 1.79% operating at a source-drain potential of 40 V.

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