4.8 Article

Ultrathin High-Quality SnTe Nanoplates for Fabricating Flexible Near-Infrared Photodetectors

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 12, 期 28, 页码 31810-31822

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c07847

关键词

van der Waals growth; nonlayered 2D SnTe crystals; near-infrared photodetectors

资金

  1. Australian Research Council [FT130101708, DP200103188, DP170104562, LP170100088]
  2. Universities Australia-DAAD German Research cooperation scheme
  3. University of Western Australia
  4. Ocean University of China
  5. National Natural Science Foundation of China [41476082]
  6. National Key Lab of Electromagnetic Environment, China Research Institute of Radiowave Propagation [201803001]
  7. WA node of Australian National Fabrication Facility (ANFF)
  8. Microscopy Australia Facility at the Centre for Microscopy, Characterisation and Analysis (CMCA) at UWA

向作者/读者索取更多资源

This work demonstrates a controlled van der Waals growth of two-dimensional SnTe nanoplates on mica substrates and their applications in flexible near-infrared photodetectors. The growth of nonlayered rock-salt structured SnTe crystals into two-dimensional SnTe nanoplate structures is mainly caused by the two-dimensional nature of the mica surface, which also results in the ultrathin nanoplates obtained (3.6 nm, equivalent to 6 monolayers). Furthermore, it is found that the shape of the SnTe nanoplates can be well engineered by changing their growth temperature due to the competition between the surface energy of the {100} crystallographic plane and that of the {111} plane. As a result of the favorable physical properties of topological crystalline insulators such as metallic surface (high electron mobility) and narrow bandgap, near-infrared photodetectors based on single SnTe nanoplate with the thickness of 3.6 nm present excellent device performance with a responsivity of 698 mA/W, a specific detectivity of 3.89 X 10(8) jones, and an external quantum efficiency of 88.5% under the illumination of a 980 nm laser at room temperature (300 K) without applying a gate voltage (V-g). Upon increasing the gate voltage from -30 to 30 V, the detector responsivity increases from 2.96 to 723 mA/W and the detector detectivity increases from 2.4 x 10(6) to 5.3 X 10(8) jones. Furthermore, upon increasing the thickness of SnTe nanoplate from 3.6 to 35 nm, the detector responsivity increases from 0.698 to 1.468 A/W. The device performance measured after bending for 300 times as well as after bending with different radii presents no obvious degradation, which exhibits the excellent flexibility of the SnTe nanoplate detectors. These results not only contribute to a deep understanding of the mechanisms of the van der Waals growth of nonlayered materials into two-dimensional structure but also demonstrate the immense potential of SnTe nanoplates to be used in flexible near-infrared detectors.

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