期刊
ACS OMEGA
卷 5, 期 18, 页码 10297-10300出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsomega.9b04238
关键词
-
资金
- National Key Research and Development Program of China [2017YFA0204800]
- National MCF Energy RD Program [2018YFE0306105]
- National Natural Science Foundation of China [21905188]
- China Postdoctoral Science Foundation [2019M651937]
- Guangdong Provincial Key Laboratory of Energy Materials for Electric Power [2018B030322001]
- Collaborative Innovation Center of Suzhou Nano Science Technology
- Priority Academic Program Development of Jiangsu Higher Education
Experimentally, the values of band gaps of semiconductor nanoparticles are generally obtained by the absorption spectrum. Nevertheless, the determinations of the corresponding energy levels of the conduction bands (CBs) or valence bands (VBs) remain a challenge. Correspondingly, an accurate prediction of the CB or VB energy values is highly desired for designing and developing semiconductor devices. Herein, on the basis of the tight-binding approximation, we report a new linear equation that may quantitatively determine the energy levels of CB and VB of semiconductor nanoparticles based on their band gaps: E-CB - E-CB(bulk) = pm(b)/qm(e)+pm(b) x (E-g - E-g(bulk)) and E-VB - E-VB(bulk) = pm(b)/qm(e)+pm(b) x (E-g - E-g(bulk)), where p and q are constants related with the crystal structures, and m(e) and m(h) are the effective mass of electrons and holes, respectively. For single elements and binary crystals with tetrahedral and octahedral unit cells, which represent the majority of important semiconductors, the above equations can be simplified as: E-CB - E-CB(bulk) = m(h)/m(e)+m(h) x (E-g - E-g(bulk)) and E-VB - E-VB(bulk) = m(h)/m(e)+m(h) x (E-g - E-g(bulk)). For Si nanoparticles, E-CB,E-Si = 0.35 x (E-g - 1.1) - 4.0 and E-VB,E-Si = -0.65 x (E-g - 1.1) - 5.1.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据