期刊
PHYSICAL REVIEW MATERIALS
卷 4, 期 4, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevMaterials.4.044003
关键词
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资金
- NSF
- MRSEC [DMR 1420541]
- Gordon and Betty Moore Foundation [GBMF4420]
- Department of Energy Basic Energy Sciences [DEFG02-00-ER45841]
Suppressing electron scattering is essential to achieve high-mobility two-dimensional electron systems (2DESs) that are clean enough to probe exotic interaction-driven phenomena. In heterostructures it is common practice to utilize modulation doping, where the ionized dopants are physically separated from the 2DES channel. The doping-well structure augments modulation doping by providing additional screening for all types of charged impurities in the vicinity of the 2DES, which is necessary to achieve record-breaking samples. Despite its prevalence in the design of ultrahigh-mobility 2DESs, the working principles of the doping-well structure have not been reported. Here we elaborate on the mechanics of electron transfer from doping wells to the 2DES, focusing on GaAs/AlGaAs samples grown by molecular beam epitaxy. Based on this understanding we demonstrate how structural parameters in the doping well can be varied to tune the properties of the 2DES.
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