相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Vacancy complexes in nonequilibrium germanium-tin semiconductors
S. Assali et al.
APPLIED PHYSICS LETTERS (2019)
Advanced GeSn/SiGeSn Group IV Heterostructure Lasers
Nils von den Driesch et al.
ADVANCED SCIENCE (2018)
Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip
Amir H. Atabaki et al.
NATURE (2018)
Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 22.3%
Wei Dou et al.
OPTICS LETTERS (2018)
The thermal stability of epitaxial GeSn layers
P. Zaumseil et al.
APL MATERIALS (2018)
GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers
Daniela Stange et al.
ACS PHOTONICS (2018)
Free-running Sn precipitates: an efficient phase separation mechanism for metastable Ge1-xSnx epilayers
Heiko Groiss et al.
SCIENTIFIC REPORTS (2017)
Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180K
V. Reboud et al.
APPLIED PHYSICS LETTERS (2017)
Short-range atomic ordering in nonequilibrium silicon-germanium-tin semiconductors
S. Mukherjee et al.
PHYSICAL REVIEW B (2017)
Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys
C. Schulte-Braucks et al.
ACS APPLIED MATERIALS & INTERFACES (2016)
Interplay between relaxation and Sn segregation during thermal annealing of GeSn strained layers
C. M. Comrie et al.
JOURNAL OF APPLIED PHYSICS (2016)
Direct Bandgap Group IV Epitaxy on Si for Laser Applications
N. von den Driesch et al.
CHEMISTRY OF MATERIALS (2015)
Lasing in direct-bandgap GeSn alloy grown on Si
S. Wirths et al.
NATURE PHOTONICS (2015)
The strain dependence of Ge1-xsnx (x=0.083) Raman shift
Chiao Chang et al.
THIN SOLID FILMS (2015)
Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1-xSnx layer on Ge(001) substrate
Wei Wang et al.
APPLIED SURFACE SCIENCE (2014)
Cubic Phase Sn-Rich GeSn Nanocrystals in a Ge Matrix
Alexander A. Tonkikh et al.
CRYSTAL GROWTH & DESIGN (2014)
Strain relaxation and Sn segregation in GeSn epilayers under thermal treatment
H. Li et al.
APPLIED PHYSICS LETTERS (2013)
Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing
Robert Chen et al.
JOURNAL OF CRYSTAL GROWTH (2013)
Epitaxial growth and anisotropic strain relaxation of Ge1-xSnx layers on Ge(110) substrates
Takanori Asano et al.
SOLID-STATE ELECTRONICS (2013)
Anisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures
H. Trinkaus et al.
JOURNAL OF APPLIED PHYSICS (2012)
Synthesis, Stability Range, and Fundamental Properties of Si-Ge-Sn Semiconductors Grown Directly on Si(100) and Ge(100) Platforms
Junqi Xie et al.
CHEMISTRY OF MATERIALS (2010)
Epitaxial growth of Ge thick layers on nominal and 6° off Si(001); Ge surface passivation by Si
J. M. Hartmann et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2009)
Tensile strained Ge layers on strain-relaxed Ge1-xSnx/virtual Ge substrates
Shotaro Takeuchi et al.
THIN SOLID FILMS (2008)
Vacancy-impurity complexes and diffusion of Ga and Sn in intrinsic and p-doped germanium
I. Riihimaki et al.
APPLIED PHYSICS LETTERS (2007)
Diffusion of silicon in crystalline germanium
HH Silvestri et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2006)
Diffusion in dislocation germanium and the model of a liquid dislocation core
EV Dobrokhotov
PHYSICS OF THE SOLID STATE (2005)