4.8 Article

Flexible low-voltage high-frequency organic thin-film transistors

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SCIENCE ADVANCES
卷 6, 期 21, 页码 -

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AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/sciadv.aaz5156

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资金

  1. German Research Foundation (DFG) [KL 2223/6-1, KL 2223/6-2, KL 2223/7-1, INST 35/1429-1 (SFB 1249)]
  2. excellence initiative Nanosystems Initiative Munich (NIM)
  3. Center for Nanoscience (CeNS)
  4. Solar Technologies go Hybrid (SolTech) initiative
  5. DFG under Germany's Excellence Strategy [EXC-2111-390814868, EXC 2089/1-390776260]
  6. European Research Council (ERC) under the European Union's Horizon 2020 research and innovation program HEROIC [638059]

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The primary driver for the development of organic thin-film transistors (TFTs) over the past few decades has been the prospect of electronics applications on unconventional substrates requiring low-temperature processing. A key requirement for many such applications is high-frequency switching or amplification at the low operating voltages provided by lithium-ion batteries (similar to 3 V). To date, however, most organic-TFT technologies show limited dynamic performance unless high operating voltages are applied to mitigate high contact resistances and large parasitic capacitances. Here, we present flexible low-voltage organic TFTs with record static and dynamic performance, including contact resistance as small as 10 Omega.cm, on/off current ratios as large as 10(10), subthreshold swing as small as 59 mV/decade, signal delays below 80 ns in inverters and ring oscillators, and transit frequencies as high as 21 MHz, all while using an inverted coplanar TFT structure that can be readily adapted to industry-standard lithographic techniques.

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