期刊
ACS ENERGY LETTERS
卷 5, 期 4, 页码 1147-1152出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsenergylett.0c00041
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资金
- U.S. Department of Energy's Office of Energy Efficiency and Renewable Energy (EERE) under the Solar Energy Technologies Office Award [DE-EE0008544]
- UT Dallas
- National Science Foundation [CBET-1916612]
- National R&D Program through the National Research Foundation of Korea (NRF) [NRF-2015M 1A2A2055836, NRF-2018R1A2B6007888, NRF-2017M3A7B4041698]
- Creative Materials Discovery Program of KNRF [2015M3D1A1068062]
- Texas Instruments Distinguished Chair in Nanoelectronics
- National Research Foundation of Korea [2015M1A2A2054991, 2015M3D1A1068062, 2017M3A7B4041696, 2018R1A2B6007888] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Degradation in CH3NH3PbI3 (MAPbI(3)), when in contact with commonly used metal oxide transport layer materials in optoelectronic devices, is examined experimentally and theoretically. On the basis of the decomposition temperature, the interfacial stability decreases in the following order: MAPbI(3) + TiO2 similar to MAPbI(3) alone > MAPbI(3) + SnO2 > MAPbI(3) + NiO, consistent with thermodynamic data. When MAPbI(3) contacts NiO or SnO2, experimental results unequivocally show interfacial decomposition occurs at a lower temperature than bulk decomposition and produces different degradation products. Density functional theory calculations reveal an altered reaction pathway on oxide surfaces and elucidate the difference between NiO and TiO2. These findings pinpoint the importance of understanding the interaction between halide perovskite and other materials used in a device to achieve intrinsically stable devices.
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