期刊
ADVANCED ELECTRONIC MATERIALS
卷 6, 期 6, 页码 -出版社
WILEY
DOI: 10.1002/aelm.202000284
关键词
2D materials; InI flakes; optics; photodetection; space-confined growth
资金
- National Natural Science Foundation of China [21825103, 51802103, 11774239]
- Hubei Provincial Natural Science Foundation of China [2019CFA002]
- Fundamental Research Funds for the Central University [2019kfyXMBZ018]
- Analytical and Testing Center of Huazhong University of Science and Technology
Layered InI has a great potential in optoelectronic applications due to its direct wide tunable bandgap. However, there is no single report about its 2D synthesis. Here, the growth of high-quality and ultrathin InI flake (as thin as 8 nm) is reported via space-confined physical vapor deposition. Impressively, an InI flake-based photodetector exhibits an ultralow off-state current of approximate to 4.2 x 10(-12) A, high on/off photocurrent ratio of 10(4), excellent detectivity of 4.2 x 10(12) Jones, a high-speed response time of 10 ms, as well as excellent effective quantum efficiency of 1600%, suggesting its promising applications in optoelectronics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据