Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure

In the field of memory and spin-logical devices, multiferroics have the potentials of low-energy informational operation. A novel memory and logic device in a PbZr0.2Ti0.8O3/Co/Pt (PZT/Co/Pt) multiferroic heterostructure with perpendicular magnetic anisotropy (PMA) is proposed. The PMA of PZT/Co/Pt structure can be modulated via the PZT/Co interface by switching the polarization field in the PZT layer. Moreover, the anomalous Hall voltage (AHV) under downward polarization is about 63% higher than that under upward polarization at 50 K without magnetic field. Interestingly, this AHV modulation is reversible, fast, and nonvolatile. Furthermore, the multiferroic random access memory and logic device operations are demonstrated based on the ferroelectric-modulated AHV, which can lower the operating current density. This nonvolatile manipulation via ferroelectric polarizations will offer a new pathway to improve spintronic and spin-logical applications.