期刊
NANOMATERIALS
卷 10, 期 4, 页码 -出版社
MDPI
DOI: 10.3390/nano10040762
关键词
monolayer; hexagonal boron nitride; chemical vapor deposition; terahertz; time domain spectroscopy
类别
资金
- National Natural Science Foundation of China [U1930116, U1832153, 11574319]
- Center of Science and Technology of Hefei Academy of Science [2016FXZY002]
Monolayer (ML) hexagonal boron nitride (hBN) is an important material in making, e.g., deep ultraviolet optoelectronic and power devices and van der Waals heterojunctions in combination with other two-dimensional (2D) electronic systems such as graphene and ML MoS2. In this work, we present a comparative study of the basic optoelectronic properties of low resistance ML hBN placed on different substrates such as SiO2/Si, quartz, PET, and sapphire. The measurement is carried out by using terahertz (THz) time-domain spectroscopy (TDS) in a temperature regime from 80 to 280 K. We find that the real and imaginary parts of the optical conductivity obtained experimentally for low resistance ML hBN on different substrates can fit well to the Drude-Smith formula. Thus, we are able to determine optically the key sample and material parameters (e.g., the electronic relaxation time or mobility, the carrier density, the electronic localization factor, etc.) of ML hBN. The effect of temperature on these parameters is also examined and analyzed. The results obtained from this study enable us to suggest the appropriate substrate for ML hBN based electronic and optoelectronic devices. This work is relevant to the application to a newly developed 2D electronic system as advanced electronic and optoelectronic materials.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据