期刊
NANOMATERIALS
卷 10, 期 4, 页码 -出版社
MDPI
DOI: 10.3390/nano10040721
关键词
CH3NH2; THz oscillation strength; MAPbI(3)
类别
资金
- JSPS KAKENHI (Japan) [17K05033]
- Gwangju Institute of Science and Technology Research Institute (GRI) - GIST
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education in the Republic of Korea [NRF2018R1D1A1B07047762]
- Australia Research Council
- Programs for Professor of Special Appointment and Distinguished Visiting Professor (Eastern Scholar) at the Shanghai Institutions of Higher Learning and the Shanghai Rising-Star Program [19QA1403800]
- Grants-in-Aid for Scientific Research [17K05033] Funding Source: KAKEN
To control the density of a CH3NH2 molecular defect, which strongly contributed to a significant THz-wave absorption property in the CH3NH3PbI3 hybrid perovskite thin film formed by the sequential vacuum evaporation method, we performed post-annealing processes with various temperatures and times. In the thin film after post-annealing at 110 degrees C for 45 min, the density of the CH3NH2 molecular defect was minimized, and CH3NH3I and PbI2 disappeared in the thin film after the post-annealing process at 150 degrees C for 30 min. However, the density of the CH3NH2 molecular defect increased. Moreover, the THz-wave absorption property for each thin film was obtained using a THz time-domain spectroscopy to understand the correlation between the density of a molecular defect and the THz-wave oscillation strength at 1.6 THz, which originated in the molecular defect-incorporated hybrid perovskite structure. There is a strong linear correlation between the oscillator strength of a significant THz-wave absorption at 1.6 THz and the CH3NH2 molecular defect density.
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