期刊
CHEMSUSCHEM
卷 9, 期 16, 页码 2261-2268出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/cssc.201600668
关键词
doping; hydrogels; graphene; hole defect; supercapacitors
资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology [NRF-2016R1A2B4015801]
The effect of the doping configuration and concentration of nitrogen (N) and sulfur (S) on the electrochemical performance of 3D N and S co-doped hole defect graphene hydrogel (NS-HGH) electrodes is investigated. Surprisingly, by introducing a hole defect on the graphene surface, the difference in the doping concentrations of N and S can be used to effectively modulate the electrochemical behavior of the NS-HGH. The hole defects provide a rapid ion diffusion path. Finally, we showed that the intriguing specific capacitance (536Fg(-1)) of the NS-HGH could enhance the overall performance of the pseudocapacitance and electric double layer capacitance. The rational design of the NS-HGH-based flexible solid state supercapacitor results in not only outstanding electrochemical performance with a maximum energy density of 14.8 Wh kg(-1) and power density of 5.2KWkg(-1) but also in extraordinary mechanical flexibility and excellent cycle stability.
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