期刊
ACS PHOTONICS
卷 7, 期 6, 页码 1367-1374出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.9b01651
关键词
amorphous selenium; cerium oxide; leakage current; impact ionization; avalanche gain; colloidal quantum dot
类别
资金
- National Institutes of Health [R21 EB025300]
- Schlumberger Foundation Faculty for the Future Program
- China Scholarship Council [201808230282]
- National Science Foundation [DMR-1420073, DMR-0923251, CRIF/CHE0840277]
- NSF MRSEC Program [DMR-1420073, DMR-0820341]
We propose a true solid-state alternative to the vacuum photomultiplier tube using amorphous selenium (a-Se) as the bulk avalanche i-layer. A-Se is a unique photosensing material in which carrier transport can be shifted entirely from localized to extended states where only holes get hot and undergo impact ionization, resulting in deterministic and non-Markovian avalanche gain. To achieve reliable and repeatable impact ionization gain without irreversible breakdown, a non-insulating metal oxide n-type hole-blocking/electron-transporting layer is needed. For the first time, we have deposited a solution-processed quantum dot (QD) hole blocking layer over an a-Se film at room temperature, without any surface or bulk crystallization. We have measured the lowest dark current density ever reported (30 pA/cm(2) at the onset of avalanche) compared to any other solid-state avalanche sensor at room temperature. Our results provide new strategies for the development of advanced solid-state photomultipliers via efficient QD-based interface layers to fully exploit the deterministic avalanche properties of a-Se.
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