期刊
ACS PHOTONICS
卷 7, 期 5, 页码 1206-1215出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.0c00028
关键词
mid-infrared bolometer; broad wavelength range; high-quality graphene; scattering channels; temperature coefficient of resistance
类别
资金
- National Science Foundation EFRI-NewLAW program [1741693]
- Office of Naval Research Young Investigator Program
- Spanish MINECO [MAT2017-88492-R, SEV2015-0522]
- ERC [789104-eNANO]
- Catalan CERCA Program
- Fundacio Privada Cellex
- Elemental Strategy Initiative by the MEXT, Japan
- CREST, JST [JPMJCR15F3]
- Emerging Frontiers & Multidisciplinary Activities
- Directorate For Engineering [1741693] Funding Source: National Science Foundation
The past decade has witnessed the realization of numerous different types of graphene photodetectors with a strong focus on the visible and near-infrared spectral range, in which various high-performance photodetectors exist based on traditional materials such as silicon and III-V compound semiconductors. However, high-speed mid-infrared photodetection at room temperature is still an unsolved challenge, despite its importance in applications such as security, sensing, and imaging. Here we address this challenge by demonstrating that high-quality graphene is an ideal high-speed bolometric material for the less-explored yet critical mid-infrared photodetection at room temperature, due to its broadband absorption, small heat capacity, and remarkably large temperature coefficient of resistance (TCR) of up to around 1% per Kelvin, which is comparable to that of commercial bolometric materials. We demonstrate a device based on graphene encapsulated in hexagonal boron nitride (hBN) exhibiting decent extrinsic responsivities of 5.1-1.4 mA/W in the 3.4-12 mu m wavelength range at room temperature, and further predict a detection bandwidth of at least 47 MHz. Our demonstration lays the foundations for graphene high-speed mid-infrared technologies.
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