Zero-writing-power tribotronic MoS2 touch memory

Here we demonstrate a zero-writing-power tribotronic touch memory based on polydimethylsiloxane (PDMS)-passivated two-dimensional (2D) MoS2. Triboelectric charges generated by touching the PDMS friction layer are stored on the dielectric PDMS and act as a gate bias which controls the electronic transport in the underlying 2D MoS2 channel. The shift of the threshold voltage can be as high as similar to 3.5 V and is retained for almost 1 h. During the writing phase, the memory does not consume any power and does not require any battery or connection to electronics. Besides, during the reading phase, a conventional p(++) silicon bottom gate allows to bias the touch memory in the highest sensitivity point, so that the output current can be changed by more than two orders of magnitude by a simple touch. Our results open the way for ultimately power-efficient post-impact detection of very slight touches with applications in safety, security, and robotics.