Enhanced performances of p-si/n-ZnO self-powered photodetector by interface state modification and pyro-phototronic effect

ZnO based self-powered photodetector (PD) has great application potential in distributing sensor networks and internet of things. However, a large number of surface or interface states within ZnO limit its performance improvement. Here, the surface and interface states of ZnO is greatly eliminated by ultraviolet irradiation as an interfacial modification engineering. Reduction of interface states reduces ohmic resistance, also enhances the tuning role of pyro-phototronic effect. And the transient response currents of the self-powered PD are thus significantly improved with a maximal enhancement factor of more than 5900% for the 325-785 nm broadband stimulating beams. The corresponding response time is decreased to few milliseconds or sub-milliseconds. The results indicate that surface-state reduction of ZnO can effectively enhance the modifying role of pyrophototronic effect and greatly improve the response performances of the self-powered broadband PDs with great application demands in Internet of things, broad spectral detecting and imaging, and smart optoelectronic devices.