Photo-Thermoelastic Model with Time-Fractional of Higher Order and Phase Lags for a Semiconductor Rotating Materials

In this work, a modified generalized fractional photothermeolastic model is constructed on the basis of the fractional calculus technique. For the considered model, Fourier law is introduced using the Taylor series expansion of higher time-fractional. The formulated model is an extension to the thermoelastic theories proposed by Lord-Shulman Lord and Shulman (J. Mech. Phys. Solid 15:299-309, 1967). Tzou (J Heat Transfer 117: 8-16, 1995) and fractional thermoelastic model introduced by Ezzat (Applied Mathematical Modelling 35:4965-4978, 2011). The model is then implemented to investigate photothermoelastic interaction in a rotating semiconductor half-space stressed by magnetic field. The numerical results of the effects of some physical functions are illustrated graphically to estimate the influences of the fractional parameter, the rotation parameter, and the higher-order time-fractional. It is shown that these parameters have a required significant influence on the physical fields.

Automated summary

A modified generalized fractional photothermoelastic model is constructed in this work based on the fractional calculus technique, extending thermoelastic theories proposed by Lord and Shulman, Tzou, and Ezzat. The model is applied to investigate photothermoelastic interaction in a rotating semiconductor half-space stressed by a magnetic field, and the numerical results show significant influences of the fractional parameter, rotation parameter, and higher-order time-fractional on the physical fields.