4.7 Article

Tungsten-Doped Zinc Oxide and Indium-Zinc Oxide Films as High-Performance Electron-Transport Layers in N-I-P Perovskite Solar Cells

期刊

POLYMERS
卷 12, 期 4, 页码 -

出版社

MDPI
DOI: 10.3390/polym12040737

关键词

transparent metal oxide; perovskite solar cell; tungsten-doped InZnO; zinc-oxynitride

资金

  1. National Research Foundation of Korea (NRF) - Ministry of Science and ICT [NRF-2018M3C1B9088457]
  2. National Research Foundation of Korea [2017R1A2B2012971]
  3. National Research Foundation of Korea [2017R1A2B2012971] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

Perovskite solar cells (PSCs) have attracted tremendous research attention due to their potential as a next-generation photovoltaic cell. Transition metal oxides in N-I-P structures have been widely used as electron-transporting materials but the need for a high-temperature sintering step is incompatible with flexible substrate materials and perovskite materials which cannot withstand elevated temperatures. In this work, novel metal oxides prepared by sputtering deposition were investigated as electron-transport layers in planar PSCs with the N-I-P structure. The incorporation of tungsten in the oxide layer led to a power conversion efficiency (PCE) increase from 8.23% to 16.05% due to the enhanced electron transfer and reduced back-recombination. Scanning electron microscope (SEM) images reveal that relatively large grain sizes in the perovskite phase with small grain boundaries were formed when the perovskite was deposited on tungsten-doped films. This study demonstrates that novel metal oxides can be used as in perovskite devices as electron transfer layers to improve the efficiency.

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