期刊
NANO-MICRO LETTERS
卷 12, 期 1, 页码 -出版社
SHANGHAI JIAO TONG UNIV PRESS
DOI: 10.1007/s40820-020-00439-9
关键词
2D semiconductors; Strain; Piezoelectric effect; Piezoresistive effect; Electronic and optoelectronics
资金
- National Natural Science Foundation of China [51572025, 51627801, 61435010, 51702219]
- State Key Research Development Program of China [2019YFB2203503]
- Guangdong Basic and Applied Basic Research Foundation [2019A1515110209]
- Science and Technology Innovation Commission of Shenzhen [JCYJ20170818093453105, JCYJ20180305125345378]
- National Foundation of China [41422050303]
- Beijing Municipal Science & Technology Commission
- Fundamental Research Funds for Central Universities
The development of two-dimensional (2D) semiconductors has attracted widespread attentions in the scientific community and industry due to their ultra-thin thickness, unique structure, excellent optoelectronic properties and novel physics. The excellent flexibility and outstanding mechanical strength of 2D semiconductors provide opportunities for fabricated strain-sensitive devices and utilized strain tuning their electronic and optic-electric performance. The strain-engineered one-dimensional materials have been well investigated, while there is a long way to go for 2D semiconductors. In this review, starting with the fundamental theories of piezoelectric and piezoresistive effect resulted by strain, following we reviewed the recent simulation works of strain engineering in novel 2D semiconductors, such as Janus 2D and 2D-Xene structures. Moreover, recent advances in experimental observation of strain tuning PL spectra and transport behavior of 2D semiconductors are summarized. Furthermore, the applications of strain-engineered 2D semiconductors in sensors, photodetectors and nanogenerators are also highlighted. At last, we in-depth discussed future research directions of strain-engineered 2D semiconductor and related electronics and optoelectronics device applications.
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