4.8 Article

Controlled Synthesis of Lead-Free and Stable Perovskite Derivative Cs2SnI6 Nanocrystals via a Facile Hot-Injection Process

期刊

CHEMISTRY OF MATERIALS
卷 28, 期 22, 页码 8132-8140

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.chemmater.6b01329

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资金

  1. Thousand Talents Program for Young Researchers
  2. National Basic Research Program of China [2015CB654901]
  3. National Natural Science Foundation of China [51502130, 11474147]
  4. Natural Science Foundation of Jiangsu Province [SBK2015043303, BK20151383]
  5. Shuangchuang Program of Jiangsu Province
  6. International Science AMP
  7. Technology Cooperation Program of China [2014DFE00200]
  8. Fundamental Research Funds for Central Universities
  9. Thousand Talents Program for Young Researchers
  10. National Basic Research Program of China [2015CB654901]
  11. National Natural Science Foundation of China [51502130, 11474147]
  12. Natural Science Foundation of Jiangsu Province [SBK2015043303, BK20151383]
  13. Shuangchuang Program of Jiangsu Province
  14. International Science AMP
  15. Technology Cooperation Program of China [2014DFE00200]
  16. Fundamental Research Funds for Central Universities

向作者/读者索取更多资源

Colloidal nanocrystals of lead halide perovskites have recently received great attention due to their remarkable performance in optoelectronic applications (e.g., light-emitting devices, flexible electronics, and photodetectors). However, the use of lead remains of great concern due to its toxicity and bioaccumulation in the ecosystem; herein we report a strategy to address this issue by using tetravalent tin (Sn4+) instead of divalent lead (Pb2+) to synthesize stable Cs2SnI6 perovskite nanocrystals. The shapes of as synthesized Cs2SnI6 nanocrystals are tuned from spherical quantum dots, nanorods, nanowires, and nanobelts to nanoplatelets via a facile hot-injection process using inexpensive and nontoxic commercial precursors. Spherical aberration corrected scanning transmission electron microscopy (Cs-corrected STEM) and simulation studies revealed a well-defined face-centered-cubic (fcc) perovskite derivative structure of Cs2SnI6 nanocrystals. The solution-processed Cs2SnI6 nanocrystal-based field effect transistors (FETs) displayed a p-type semiconductor behavior with high hole mobility (>20 cm(2)/(V s)) and high I-ON/I-OFF ratio (>10(4)) under ambient conditions. We envision that this work will pave the way to produce new families of high-performance, stable, low-cost and nontoxic nanocrystals for optoelectronic applications.

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