期刊
SOLID STATE COMMUNICATIONS
卷 310, 期 -, 页码 -出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2020.113847
关键词
-
资金
- Australian Research Council
Sapphire-supported hBN films of different thicknesses are grown using metalorganic vapour phase epitaxy technique by following a flow modulation scheme. Though these wafer-scale films are potential candidates for real device applications, they exhibit wrinkling. The wrinkles are a key signature of strain distribution in the films. We utilized Raman imaging to study the residual strain distribution in the wrinkled hBN films. An increase in the overall compressive strain in the films with an increase in the layer thickness is observed and explained. An empirical relation is proposed for estimating the wrinkle mediated strain relaxation from the morphology of the films. Furthermore, we show that the residual strain can be partially released by the delamination of the films.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据