期刊
SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷 208, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.solmat.2019.110352
关键词
Perovskite solar cell; Near infrared radiation; Rapid thermal annealing; Hole transport layer; Cobalt doped nickel oxide; Interface engineering
资金
- Ministry of Science and Technology of Taiwan [107-2218-E-131-007, 108-3116-F-002-002-CC2]
Lead halide perovskite solar cells (PVSCs) have potential toward commercialization because of their high efficiency and low cost. The hole transport layer (HTL) of p-i-n perovskite solar cell is usually made of NiOx. However, the NiOx needs to be processed at 300 degrees C for 15 min for good hole transport property. This long heating time prohibits the development of continuous commercial process. Thus, a rapid heating process for the NiOx film deposition is critical to realize the commercialization of PVSCs in the future. In this study, we develop a facile method to obtain high quality NiOx films annealed by NIR in a short time of 50 s. A short-wave NIR lamp at 2500 K was used to systematically investigate the effect of NIR intensity on the film quality of sol-gel NiOx. The PVSCs fabricated from NIR-annealed NiOx (NIR-NiOx) film show a comparable power conversion efficiency (PCE) to those fabricated from traditional hot-plate annealed-NiOx (HP-NiOx). In addition, the NIR annealed cobalt-doped NiOx (NIR-Co:NiOx) was synthesized to replace pristine NIR-NiOx. The PCE of PVSCs fabricated from this new NiOx film can be increased from 15.99% to 17.77%, which is due to the efficient hole extraction, less charge accumulation, and reducing V-oc loss resulting from the improved hole mobility, reduced interface resistance and well-matched work function. Our study paves a way to fulfill the requirements of low cost and low energy consumption of large scale production of high efficiency PVSCs.
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