期刊
SMALL
卷 16, 期 20, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.202000852
关键词
chemical vapor deposition; phase transition; photoresponsivity; ternary TMDs; W; (1-); Re-x; S-x; (2) alloys
类别
资金
- Ministry of Science and Technology of China [2016YFB0303901-05]
- Changjiang Scholars Programs [T2015136]
Tuning bandgap and phases in the ternary 2D transition metal dichalcogenides (TMDs) alloys has opened up unexpected opportunities to engineer optoelectronic properties and explore potential applications. In this work, a salt-assisted chemical deposition vapor (CVD) growth strategy is reported for the creation of high-quality monolayer W1-xRexS2 alloys to fulfill a readily phase control from 1H to DT by changing the ratio of Re and W precursors. The structures and chemical compositions of doping alloys are confirmed by combining atomic resolution scanning transmission electron microscopy-annular dark field imaging with energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy, matching well with the calculated results. The field-effect transistors (FETs) devices fabricated based on 1H-W0.9Re0.1S2 monolayer exhibit a n-type semiconducting behavior with the mobility of 0.4 cm(2) V-1 s(-1). More importantly, the FETs show high-performance responsivity with a value of 17 mu A W-1 in air, which is superior to that of monolayer CVD-grown WS2. This work paves the way toward synthesizing monolayer ternary alloys with controlled phases for potential optoelectronic applications.
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