4.8 Review

Recent Process of Flexible Transistor-Structured Memory

期刊

SMALL
卷 17, 期 9, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201905332

关键词

charge-trap transistor memory; ferroelectric field-effect transistor memory; floating-gate transistor memory; optical memory transistors; transistor-structured artificial synapses

资金

  1. Natural Science Foundation of Tianjin [18JCYBJC16000]
  2. Key Research and Development Program of Guangdong Province [2018B030338001]
  3. 111 Project [B16027]
  4. International Cooperation Base [2016D01025]
  5. Tianjin Science Foundation for Distinguished Young Scholars [19JCJQJC61000]
  6. Tianjin International Joint Research and Development Center
  7. Hundred Young Academic Leaders Program of Nankai University

向作者/读者索取更多资源

FTSM, a key component in flexible electronics, utilizes floating-gate, charge-trap, and ferroelectric mechanisms for nonvolatile information storage, and can be operated by optical inputs through the introduction of an optical sensory module. Transistor-structured artificial synapse, a special type of FTSM, mimics important functions of biological synapses to achieve brain-inspired memory behaviors and nervous signal transmissions.
Flexible transistor-structured memory (FTSM) has attracted great attention for its important role in flexible electronics. For nonvolatile information storage, FTSMs with floating-gate, charge-trap, and ferroelectric mechanisms have been developed. By introducing an optical sensory module, FTSM can be operated by optical inputs to function as an optical memory transistor. As a special type of FTSM, transistor-structured artificial synapse emulates important functions of a biological synapse to mimic brain-inspired memory behaviors and nervous signal transmissions. This work reviews the recent development of the above mentioned FTSMs, with a focus on working mechanism and materials, and flexibility.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据