期刊
SMALL
卷 17, 期 9, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201905332
关键词
charge-trap transistor memory; ferroelectric field-effect transistor memory; floating-gate transistor memory; optical memory transistors; transistor-structured artificial synapses
类别
资金
- Natural Science Foundation of Tianjin [18JCYBJC16000]
- Key Research and Development Program of Guangdong Province [2018B030338001]
- 111 Project [B16027]
- International Cooperation Base [2016D01025]
- Tianjin Science Foundation for Distinguished Young Scholars [19JCJQJC61000]
- Tianjin International Joint Research and Development Center
- Hundred Young Academic Leaders Program of Nankai University
FTSM, a key component in flexible electronics, utilizes floating-gate, charge-trap, and ferroelectric mechanisms for nonvolatile information storage, and can be operated by optical inputs through the introduction of an optical sensory module. Transistor-structured artificial synapse, a special type of FTSM, mimics important functions of biological synapses to achieve brain-inspired memory behaviors and nervous signal transmissions.
Flexible transistor-structured memory (FTSM) has attracted great attention for its important role in flexible electronics. For nonvolatile information storage, FTSMs with floating-gate, charge-trap, and ferroelectric mechanisms have been developed. By introducing an optical sensory module, FTSM can be operated by optical inputs to function as an optical memory transistor. As a special type of FTSM, transistor-structured artificial synapse emulates important functions of a biological synapse to mimic brain-inspired memory behaviors and nervous signal transmissions. This work reviews the recent development of the above mentioned FTSMs, with a focus on working mechanism and materials, and flexibility.
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