期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 35, 期 8, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6641/ab8e62
关键词
GaN HEMT; current collapse; multiphonon ionisation
A two-dimensional analytical model involving a multi-phonon tunneling process at high static electric fields in AlGaN/GaN HEMTs to explain the drain current collapse has been attempted. This model successfully explains the sudden recovery of drain current at a particular drain voltage for different applied gate voltages due to an exponential increase in emission rate from surface donors. This phenomenon leads to a rapid collapse of the virtual gate formed from the gate edge towards the drain, eventually causing a full recovery of the drain current to an uncollapsed condition. This paper also includes the effect of an increase in channel temperature by self-heating due to applied gate and drain voltages.
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