β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process

beta-Ga2O3 MOSFETs are demonstrated on heterogeneous Ga2O3-Al2O3-Si (GaOISi) substrate fabricated by ion-cutting process. Enhancement (E)- and depletion (D)-mode beta-Ga2O3 transistors are realized on by varying the channel thickness (T-ch). E-mode GaOISi transistor with a T-ch of 15 nm achieves a high threshold voltage V-TH of similar to 8 V. With the same T increase, GaOISi transistors demonstrate more stable ON-current I-ON and OFF-current I-OFF performance compared to the reported devices on bulk Ga2O3 wafer. Transistors on GaOISi achieve the breakdown voltage of 522 and 391 V at 25 degrees C and 200 degrees C, respectively.