期刊
SCIENCE
卷 368, 期 6487, 页码 177-+出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.aay8663
关键词
-
资金
- Packard Fellowship for Science and Engineering
- NSF as part of the National Nanotechnology Coordinated Infrastructure (NNCI) [ECCS-1542015]
Ratcheting effects play an important role in systems ranging from mechanical socket wrenches to biological motor proteins. The underlying principle is to convert a fluctuating, unbiased force into unidirectional motion. Here, we report the ratcheting of electrons at room temperature using a semiconductor nanowire with precisely engineered asymmetry. Modulation of the nanowire diameter creates a cylindrical sawtooth geometry with broken inversion symmetry on a nanometer-length scale. In a two-terminal device, this structure responded as a three-dimensional geometric diode that funnels electrons preferentially in one direction through specular reflection of quasi-ballistic electrons at the nanowire surface. The ratcheting effect causes charge rectification at frequencies exceeding 40 gigahertz, demonstrating the potential for applications such as high-speed data processing and long-wavelength energy harvesting.
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