4.8 Article

Origin of Plasticity in Nanostructured Silicon

期刊

PHYSICAL REVIEW LETTERS
卷 124, 期 18, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.124.185701

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资金

  1. National Natural Science Foundation of China [U1930401, 51871054]
  2. Office of Science, DOE-BES [DE-AC02-05CH11231]
  3. NSF [EAR-1634415]
  4. DOE [DE-FG02-94ER14466]
  5. Department of Energy (DOE)-National Nuclear Security Administration (NNSA) [DE-NA0001974]
  6. DOE, Office of Basic Energy Sciences (BES) [DE-AC02-06CH11357]

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The mechanism of plasticity in nanostructured Si has been intensively studied over the past decade but still remains elusive. Here, we used in situ high-pressure radial x-ray diffraction to simultaneously monitor the deformation and structural evolution of a large number of randomly oriented Si nanoparticles (SiNPs). In contrast to the high-pressure beta-Sn phase dominated plasticity observed in large SiNPs (similar to 100 nm), small SiNPs (similar to 9 nm) display a high-pressure simple hexagonal phase dominated plasticity. Meanwhile, dislocation activity exists in all of the phases, but significantly weakens as the particle size decreases and only leads to subtle plasticity in the initial diamond cubic phase. Furthermore, texture simulations identify major active slip systems in all of the phases. These findings elucidate the origin of plasticity in nanostructured Si under stress and provide key guidance for the application of nanostructured Si.

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