期刊
OPTICS EXPRESS
卷 28, 期 9, 页码 13845-13860出版社
Optica Publishing Group
DOI: 10.1364/OE.391737
关键词
-
类别
资金
- U.S. Department of Energy [DE-AC36-08GO28308]
- National Renewable Energy Laboratory
- Office of Energy Efficiency and Renewable Energy
- Solar Energy Technologies Office [34358, 34911]
Ultra-thin photovoltaics offer the potential for increasing efficiency while minimizing costs. However, a suitable light trapping strategy is needed to reach the optically thick regime for otherwise thin-film structures. III-V materials can benefit from simple adjacent light trapping structures, if correctly designed. Here we present three strategies for a 300 nm thick GaAs cell using front photonic crystals, back photonic crystals, and both front and hack combined, predicting a maximum photocurrent, J(sc) =29.9 mA/cm(2) under the radiative limit, including an enhanced absorption in the Urbach-tail. We analyze the increased absorption isolating the Fabry-Perot resonances, the single pass absorption and the scattered contribution from the incident light. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据