期刊
NANOTECHNOLOGY
卷 31, 期 31, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/ab8c08
关键词
black phosphorus; doping; field effect transistors; chemical vapor transport
资金
- National Natural Science Foundation of China [51672246, 51272232]
- National Key Research and Development Program of China [2017YFA0304302]
- Fundamental Research Funds for the Central Universities
Black phosphorus has many potential applications in optoelectronic devices because of its unique properties. Adjusting its performance by doping is an important issue of research. In this paper, we synthesized high-quality Te-doped crystals by the chemical vapor transport method. Tellurium doping with an atomic ratio of 0.1% was confirmed by X-ray photoelectron spectroscopy, X-ray diffraction, and energy dispersive X-ray analysis. The performance of field effect transistors devices shows that the hole mobility of Te-doped black phosphorous (BP) is significantly improved compared with that of undoped-BP. The highest hole mobility at room temperature is 719 cm(2) V-1 s(-1), and the electron mobility is 63 cm(2) V-1 s(-1). Te-doped BP field effect transistors show an obvious bipolar behavior.
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