期刊
NANO LETTERS
卷 20, 期 6, 页码 4673-4680出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.0c01550
关键词
In situ dynamic thermal crystallization; Low-temperature preparation process; Large-area; Flexible Perovskite light-emitting devices
类别
资金
- National Natural Science Foundation of China [61974054, 61675088, 61275024, 61377026]
- International Science AMP
- Technology Cooperation Program of Jilin [20190701023GH]
- International Science AMP
- Technology Cooperation Program of China [2014DFG12390]
- National Key Research Program of China [2016YFB0401001]
- Scientific and Technological Developing Scheme of Jilin Province [20140101204JC, 20130206020GX, 20140520071JH, 20130102009JC]
- National Research Foundation of Korea (NRF) - Korea government (MSIT) [2020R1C1C1008485]
- Project of Science and Technology Development Plan of Jilin Province [20190302011G]
- National Research Foundation of Korea [2020R1C1C1008485] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The present study systematically investigates the morphology and crystallization process of inorganic CsPbBr3 perovskite layer films fabricated by thermal coevaporation in conjunction with continuous low-temperature thermal annealing to promote in situ dynamic thermal crystallization. The results confirm for the first time that both the crystal grain size and the compactness of the CsPbBr3 films can be tuned during the thermal coevaporation fabrication process via in situ dynamic thermal crystallization. The performance of the PeLEDs employing the CsPbBr3 films as the emitter layer is investigated in detail with respect to the substrate temperature and deposition rate employed during deposition of the CsPbBr3 film. This study provides guidelines for developing suitable film production processes and highlights future challenges that must be addressed to facilitate the commercial development of large-area, uniform, and flexible perovskite-based optoelectronic devices.
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