期刊
NANO LETTERS
卷 20, 期 5, 页码 3427-3434出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.0c00339
关键词
Silicon carbide; divacancy; single spin defect; Purcell enhancement; coherent spin control; photonic crystal cavity
类别
资金
- NSF EFRI AQUIRE [EFMA-1641099]
- Univ. of Chicago MRSEC [DMR-1420709]
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences
- Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource [NSF ECCS-1542205]
- JSPS KAKENHI [17H01056, 18H03770]
- Grants-in-Aid for Scientific Research [17H01056] Funding Source: KAKEN
Silicon carbide has recently been developed as a platform for optically addressable spin defects. In particular, the neutral divacancy in the 4H polytype displays an optically addressable spin-1 ground state and near-infrared optical emission. Here, we present the Purcell enhancement of a single neutral divacancy coupled to a photonic crystal cavity. We utilize a combination of nanolithographic techniques and a dopant-selective photoelectrochemical etch to produce suspended cavities with quality factors exceeding 5000. Subsequent coupling to a single divacancy leads to a Purcell factor of similar to 50, which manifests as increased photoluminescence into the zero-phonon line and a shortened excited-state lifetime. Additionally, we measure coherent control of the divacancy ground-state spin inside the cavity nanostructure and demonstrate extended coherence through dynamical decoupling. This spin-cavity system represents an advance toward scalable long-distance entanglement protocols using silicon carbide that require the interference of indistinguishable photons from spatially separated single qubits.
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