期刊
CHEMICAL PHYSICS LETTERS
卷 652, 期 -, 页码 98-101出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.cplett.2016.04.008
关键词
Thin films; Sol-gel chemistry; Electrical properties
资金
- Natural Science Foundation of Guangdong Province [2014A030310410]
- Research Foundation from Department of Education of Guangdong Province [314B0109]
BiFeO3 and BiFeO3/NiO thin films have been deposited on Pt/Ti/SiO2/Si substrates by sol-gel method. Compared with bare BiFeO3 thin films, an improvement of memory resistive switching characteristic, such as the dispersion of switching voltages and resistances, has been clearly observed in BiFeO3 thin films using NiO as a buffer layer. Moreover, threshold resistive switching has also been demonstrated in BiFeO3/NiO thin films, but no observation in BiFeO3 thin films. Then, the role of thin NiO layer on memory resistive switching stabilization and threshold resistive switching is discussed. (C) 2016 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据