期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 110, 期 -, 页码 -出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2020.104974
关键词
Composite; Intermetallic; AlSb; Zn4Sb3; Thermoelectric
类别
资金
- Korea Basic Science Institute - Ministry of Education [2019R1A6C1010047]
- National Research Foundation of Korea [2019R1A6C1010047] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The III-V semiconductor AlSb has an indirect band gap and a relatively moderate thermal conductivity. Intrinsic AlSb has a promising thermopower, but a very high resistivity and the lattice thermal conductivity keeps the ZT value significantly low. This work shows a process of reducing the thermal conductivity by formation of binary composite with Zn4Sb3. beta-Zn4Sb3 powders were synthesized by sintering of cold compacted pellets and AlSb was fabricated using controlled casting in tapped graphite crucible. Inclusion and dispersion of 10 wt % beta-Zn4Sb3 within the matrix of AlSb has reduced the thermal conductivity by more than 5 times. In addition, the composite shows improved electrical conductivity without a significant decrease in thermopower. Overall, the thermoelectric figure of merit shows proportionality with the increasing amount of beta-Zn4Sb3, where the ZT increases significantly.
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