期刊
MATERIALS LETTERS
卷 266, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.matlet.2020.127413
关键词
Memristor; 2D material MXene; Conduction mechanism; Synaptic plasticity
资金
- Postgraduate Research & Practice Innovation Program of Jiangsu Province [SJKY19_0806, SJCX19_0256, SJKY19_0811]
- National Natural Science Foundation of China [61804079, 61874059, 21671167, 2018YFB2003300, 2018M642290]
- Jiangsu and Anhui Province Research Foundation [1708085MF148, SZDG2018007, 18KJD510005, CZ1060619001]
- NJUPTSF [NY217116, NY218110, BK20191202, KFJJ20170101, NY217132]
As the emerging device for neuromorphic applications, memristive device is arguable regarded as the most promising candidate to emulate biological synapse due to its specific analog behaviors and various plasticities. Nevertheless, the stability of memristive device remains an extreme challenge limiting its practical applications. In this work, two-dimensional (2D) material MXene is introduced into TiN/Cu/SiO2/TiN device as an insertion layer. The existence of MXene leads the memristor to perform more stable resistance states. The dominant conduction mechanisms responsible for stable resistance states are consistent with space charge limited and Ohmic conductions. In addition, synaptic plasticities, including long-term potentiation and depression, have been successfully mimicked by MXene memristors. (C) 2020 Published by Elsevier B.V.
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