期刊
JOURNAL OF SUPERCRITICAL FLUIDS
卷 158, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.supflu.2019.104746
关键词
Supercritical fluid; Nitridation; AlGaN/GaN HEMTs; Interface trap states
资金
- National pre-research foundation of China [31512050402]
- Fund of Innovation Center of Radiation Application [KFZC2018040202]
A non-destructive low-temperature supercritical nitridation (LTSCN) is proved to boost the performance of AlGaN/GaN HEMTs. The samples were treated at 120 degrees in a supercritical CO2 fluid mixed with NH3 under 20.7 MPa for one hour. After the LTSCN, the gate leakage current decreases by 69.6 % for an increase of the Schottky barrier height and the subthreshold swing is reduced by 19.9 %. Furthermore, the on-resistance is reduced by 20.4 % due to an enhancement of the mobility. The slow trap state density near AlGaN/GaN interface decreases from (5.12 x 10(13) to 7.07 x 10(13)) cm(-2).ev(-1) to (1.80 x 10(13) to 2.36 x 10(13)) cm(-2).eV(-1) with a decrease in activation energy from (0.492 to 0.500) eV to (0.467 to 0.496) eV after the LTSCN. A modified model of the LTSCN is presented to expound the change of the slow traps and the Coulomb scattering effect of electrons capture in the changed slow traps is adopted to explain the mobility improvement. (C) 2019 Elsevier B.V. All rights reserved.
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