期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 53, 期 34, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/ab8d6e
关键词
beta-Ga2O3; p-GaN gate; field-effect transistors; normally-off; polarization-induced doping
资金
- National Science Foundation of China [51961145110, 61905236]
- University of Science and Technology of China [KY2100000081]
- Chinese Academy of Sciences [KJ2100230003]
- Fundamental Research Funds for the Central Universities [WK2100230020]
- USTC Research Funds of the Double First-Class Initiative [YD3480002002]
III-nitrides and beta-phase gallium oxide (beta-Ga2O3) are currently two intensively investigated wide bandgap semiconductor materials for power electronics. Due to the relatively low lattice mismatch between the two material systems and the availability of bulk AlN, GaN and beta-Ga(2)O(3)substrates, epitaxial growth of III-nitrides on beta-Ga(2)O(3)or vice versa has been realized. However, the design of power devices by integrating the two material systems is still lacking. Here we numerically investigate an AlN/beta-Ga2O3 heterostructure by taking advantage of polarization-induced doping to realize high-performance enhancement-mode transistors. Induced by polarization effects at the AlN/beta-Ga2O3 interface, a 2-dimensional electron gas concentration can reach up to 8.1 x 10(19)cm(-3) in the channel. On top of the channel, a p-GaN gate was introduced and eventually a normally-off AlN/beta-Ga2O3 field-effect transistor with tunable positive threshold voltages was realized. Furthermore, we inserted an unintentionally doped GaN back barrier layer to suppress the drain leakage current. Eventually, the transfer and output characteristics of the proposed device with different structural parameters were further investigated and analyzed in the pursuit of high-performance III-nitrides/Ga2O3-based power devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据