期刊
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
卷 20, 期 6, 页码 3919-3924出版社
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2020.17503
关键词
GaN; Laser MBE; Nanostructure; Scanning Electron Microscopy; Photoluminescence
类别
资金
- council for scientific and industrial research (CSIR)
Evolution of GaN nanostructure grown on Si (111) substrate has been studied systematically using laser molecular beam epitaxial process. The in-situ reflection high energy electron diffraction and ex-situ high resolution X-ray diffraction studies reveal that the GaN nanostructures have a hexagonal-wurtzite phase and grow along c-axis. The GaN morphology changes from compact granular layer to faceted pyramids to nanowall structure as a function of laser ablation frequency of the KrF excimer laser and radio frequency nitrogen plasma condition. It is observed that GaN nanowall structure is formed on Si (111) when grown under strong nitrogen-rich flux at a higher growth rate and growth temperature. The crystalline and optical quality of the GaN nanostructures significantly improved with increase of laser ablation frequency. The nanowall structure shows good optical emission properties with an intense, sharp near-band edge emission and a negligible deep band luminescence.
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