期刊
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
卷 20, 期 4, 页码 2395-2401出版社
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2020.17365
关键词
beta-Ga2O3; Nanowires; Longitudinal Twinning; Defect Luminescence
类别
资金
- National Natural Science Foundation of China [11874185, 11804126]
- Program for Science and Technology Innovation Talents in Universities of Henan Province [18HASTIT032]
- Science and Technology Development Plan Project of Henan Province [192102210159]
In this paper, beta-Ga2O3 nanowires were synthesized by vapor transport method at different temperatures. The as-prepared samples were analyzed for crystal structure by X-ray diffraction (XRD), transmission electron microscopy (TEM) and selected area electron diffraction (SAED), and for morphology using scanning electron microscopy (SEM). The results show that the Ga2O3 nanowires present a monoclinic structure, the length and diameter of the Ga2O3 nanowires increased with the growth temperature. A majority of the Ga2O3 nanowires present longitudinal twinning structures. A broad photoluminescence emission band was observed from the Ga2O3 nanowires at room temperature, which is caused by different kinds of vacancy defects. Our study shows an unusual twinning structure of beta-Ga2O3 nanowires, which may be helpful to understand the growth mechanism of nanowires.
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