期刊
JOURNAL OF LUMINESCENCE
卷 220, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.jlumin.2019.116961
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类别
资金
- China Scholarship Council (CSC) [201708320363]
Photoluminescence spectra of self-assembled cuprous iodide structures produced by solvent-antisolvent crystallization were investigated over eight orders of magnitude of excitation power density. Through an analysis of the effects of different annealing conditions on the emission spectra two defects-related emissions, associated to copper and iodine vacancies, and a free exciton recombination peak were identified. At higher power densities, an enhanced increase in the broad defects-related emission band accompanied by a decrease in other contributions was observed. A fast, non-radiative Auger process is proposed as the main mechanism allowing high energy electrons to be trapped at deep level defects associated to the broad defects-related emission band while simultaneously reducing the amount of free charge carriers, which results in the observed behavior. With a rate-equation model developed for the proposed mechanism a close fit between simulated and experimental data was achieved.
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